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• Yanwei Yang, Zhouyu Tong, Xiaodong Pi*, Deren Yang, Yuanchao Huang*. Investigation of basal plane dislocation nucleation in Al-doped p-type 4H-SiC using nanoindentation and molecular dynamics. Materials Science in Semiconductor Process. 2025, 192, 109377.

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• Yanwei Yang, Zhouyu Tong, Xiaodong Pi*, Deren Yang, Yuanchao Huang*. The role of aluminum doping in shaping the mechanical properties of p-type 4H-SiC. CrystEngComm, 2025, Advance Article.

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• Yanwei Yang, Keqiang Li*, Zhouyu Tong, Xiaodong Pi*, Deren Yang, Yuanchao Huang*. The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC. Journal of Applied Physics. 2024, 136, 045706. (SCI, accepted)